High temperature furnace for integrated circuit manufacture

Details High temperature furnace for integrated circuit manufacture High temperature furnace for integrated circuit manufacture

1986-12-08

1987-07-14

Yuen, Henry C.

Heating

With means diluting, purifying or burning exhaust gases

110210, 110211, 432222, F23J 1500

Patent

active

046800085

ABSTRACT:
A high temperature furnace including a furnace chamber maintained at an internal temperature above the ignition temperature of a gas mixture used for the growth of oxide layers on silicon substrates therein. A separate burn chamber is used to mix and burn the gas mixture. A tube conveys the mixture into the furnace chamber so that ignition of the gas mixture in the furnace chamber creates a flame front that travels back along the tube to the burn chamber to sustain ignition therein.

REFERENCES:
patent: 2538412 (1951-01-01), Cecil et al.
patent: 3306335 (1967-02-01), Myers
patent: 3706446 (1972-12-01), Briggs
patent: 3822987 (1974-07-01), Zanft
patent: 3917442 (1975-11-01), Zagoroff
patent: 4060379 (1977-11-01), Lattaye et al.
patent: 4082497 (1978-04-01), Crawford et al.
patent: 4457704 (1984-07-01), Sommers et al.
patent: 4508669 (1985-04-01), Iwai et al.

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