High temperature electronic devices

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects

Reexamination Certificate

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Details

C257S633000, C438S105000, C438S127000

Reexamination Certificate

active

10992145

ABSTRACT:
In at least some embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit fabricated on a silicon carbide substrate, and a thick passivation layer. In other embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit formed from silicon located on a sapphire substrate, and a thick passivation layer. The electronic devices may be implemented in the context of hydrocarbon drilling and production operations.

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