Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects
Reexamination Certificate
2007-11-27
2007-11-27
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
C257S633000, C438S105000, C438S127000
Reexamination Certificate
active
10992145
ABSTRACT:
In at least some embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit fabricated on a silicon carbide substrate, and a thick passivation layer. In other embodiments, electronic devices suitable for use at temperatures in excess of 200 C. may comprise an integrated circuit formed from silicon located on a sapphire substrate, and a thick passivation layer. The electronic devices may be implemented in the context of hydrocarbon drilling and production operations.
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Freeman James J.
Golla Christopher A.
Masino James E.
Rodney Paul F.
Schultz Roger L.
Halliburton Energy Service,s Inc.
Krueger Daniel J.
Krueger Iselin LLP
Nguyen Tuan H.
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