High temperature electrode-barriers for ferroelectric and other

Details High temperature electrode-barriers for ferroelectric and other High temperature electrode-barriers for ferroelectric and other

1996-12-06

1998-08-04

Kincaid, Kristine L.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361511, 361313, 361322, 257295, 257306, H01G 4008

Patent

active

057903662

ABSTRACT:
A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer of Pt--Rh, and a top layer of Pt--Rh--O.sub.x. A ferroelectric material such as PZT (or other material) is situated on the bottom electrode. A top electrode, preferably of identical composition as the bottom electrode, is situated on the opposite side of the ferroelectric from the bottom electrode.

REFERENCES:
patent: 5003428 (1991-03-01), Shepherd
patent: 5005102 (1991-04-01), Larson
patent: 5142437 (1992-08-01), Kammerdiner et al.
patent: 5185689 (1993-02-01), Maniar
patent: 5555486 (1996-09-01), Kingon et al.

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