High-temperature electrical contact for making contact to cerami

Details High-temperature electrical contact for making contact to cerami High-temperature electrical contact for making contact to cerami

1993-09-17

1995-08-08

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

437246, 437190, 437192, 257295, 257764, 257769, 257915, H01L 2943

Patent

active

054401739

ABSTRACT:
A method for connecting a silicon substrate to an electrical component via a platinum conductor. The resulting structure may be heated in the presence of oxygen to temperatures in excess of 800.degree. C. without destroying the electrical connection between the silicon substrate and components connected to the platinum conductor. The present invention utilizes a TiN or TiW buffer layer to connect the platinum conductor to the silicon substrate. The buffer layer is deposited as a single crystal on the silicon substrate. The platinum layer is then deposited on the buffer layer. The region of the platinum layer in contact with the buffer layer is also a single crystal.

REFERENCES:
patent: 3879746 (1975-04-01), Fournier
patent: 4673593 (1987-06-01), Himoto
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5382817 (1995-01-01), Kashihara et al.
S. Kanamori, et al. "Supression of Platinum Penetration Failure . . . " Thin Solid Films 110 (1983) pp. 205-213.

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