High-temperature bias anneal of integrated circuits for improved

Details High-temperature bias anneal of integrated circuits for improved High-temperature bias anneal of integrated circuits for improved

1994-06-02

1996-05-14

Fourson, George

Fishing, trapping, and vermin destroying

437171, 437938, 437 57, H01L 21477

Patent

active

055167314

ABSTRACT:
A technique for improving the radiation hardness and hot-electron resistance of a CMOS integrated circuit is described whereby undesirable hydrogen ions may be vented through any holes, such as contact holes, in an overlying passivation layer by applying an elevated temperature and/or electrical bias to the integrated circuit die. The elevated temperature and electrical bias serve to accelerate the process by which hydrogen vents from the die. The elimination of unwanted hydrogen significantly reduces threshold shifts in the CMOS integrated circuit, providing greater radiation hardness and hot-electron resistance.

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