Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Patent
1987-12-23
1989-04-25
Childs, Sadie
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
4272553, 4273722, 4273741, 427402, 427225, 427233, 427238, 427243, C23C 1624, C23C 1640
Patent
active
048246980
ABSTRACT:
The present invention provides a method of treating a SIMOX wafer so that oxygen precipitates and heavy metal, carbon, and other contaminants are substantially reduced. The method includes forming a protective layer on the SIMOX surface, heating the wafer and protective layer so that the precipitates and contaminants disolve and diffuse into the protective layer, and slowly cooling the wafer to permit continued diffusion during cooling.
REFERENCES:
patent: 4386968 (1983-07-01), Hinkel et al.
patent: 4631804 (1986-12-01), Roy
M. J. Kim et al., "Surface Restoration of Oxygen-Implanted Silicon," Journal of Applied Physics, 54(4), Apr. 1983, pp. 1991-1999.
Jastrzebski Lubomir L.
Looney Gary W.
Patterson David L.
Childs Sadie
Davis Jr. James C.
General Electric Company
Squire William
Webb II Paul R.
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