Compositions – Radioactive compositions – Nuclear reactor fuel
Patent
1977-10-12
1979-12-04
Edlow, Martin H.
Compositions
Radioactive compositions
Nuclear reactor fuel
357 4, 357 61, 357 63, 252 635, H01L 4500
Patent
active
041774744
ABSTRACT:
An amorphous semiconductor member which is capable of withstanding high temperatures and of having good toughness characteristics comprises an amorphous semiconductor material including a composition of a plurality elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, formed in a solid amorphous host matrix having structural configuration which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy. It also includes a modifier material added to the amorphous host matrix, such as a transition metal or rare earth element, having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above. The amorphous semiconductor member may also comprise an amorphous host matrix formed from boron, carbon, silicon or germanium having a modifier material of boron or carbon added thereto. The forming of the amorphous host matrix and the adding of the modifier material is preferably done by cosputtering or the like.
REFERENCES:
patent: 3688160 (1972-08-01), Nagasawa
patent: 3716844 (1973-02-01), Brodsky
patent: 3864717 (1975-02-01), Merrin
patent: 3983542 (1976-09-01), Ovishinsky
Shimakawa, Japan J. Appl. Phys., 10 (1971), pp. 1116-1117.
Petersen, et al., IEEE Transactions on Electron Devices, vol. ED-23, No. 4, Apr. 1973, pp. 471-477.
Spear, Proceed. 5th Int. Conf. on Amorphous Semiconductors, Partenkirche, Fed. Rep. Germany, Sep. 3-8, 1973.
Edlow Martin H.
Energy Conversion Devices Inc.
LandOfFree
High temperature amorphous semiconductor member and method of ma does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High temperature amorphous semiconductor member and method of ma, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High temperature amorphous semiconductor member and method of ma will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-93462