Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1977-10-31
1979-12-04
Larkins, William D.
Static information storage and retrieval
Magnetic bubbles
Guide structure
357 16, 357 90, 365163, H01L 4500
Patent
active
041774752
ABSTRACT:
This disclosure relates to an electrically alterable amorphous memory device which can be switched from a high resistance state to a low resistance state, which device has a stable voltage threshold that is temperature insensitive throughout the lifetime of the device. The memory device is formed of a graded structure having at least three regions or layers of amorphous material selected from the tellurium based chalcogenide class of materials, particularly tellurium-germanium systems. The center or middle region is formed of the eutectic material which is in the range of 15 to 17 percent germanium although this range may vary from 10 to 25 percent. The top region or the region closest to the positive electrode is primarily tellurium with from 0 to 10 percent germanium. The bottom region or region closest to the negative electrode is formed of a material which has the highest glassy state transition temperature which material is approximately 33 percent germanium although this may vary from 25 to 45 percent germanium.
REFERENCES:
patent: 3886577 (1975-05-01), Buckley
Burroughs Corporation
Larkins William D.
Peterson Kevin R.
Young Mervyn L.
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