Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-06-08
1990-10-09
Ryan, Patrick
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 505704, 29599, 428688, 428930, 428901, B32B 900
Patent
active
049620860
ABSTRACT:
High T.sub.c oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high T.sub.c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.
REFERENCES:
Wall Street Journal, Nov. 3, 1988, "Researchers Discover New Materials for Use in Superconducting Electronics".
Superconductor Week, Oct. 30, 1989, "High Quality Monocrystal Developed by Japanese".
Gallagher William J.
Giess Edward A.
Gupta Aranava
Laibowitz Robert B.
O'Sullivan Eugene J.
International Business Machines - Corporation
Ryan Patrick
Stanland Jackson E.
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