High T.sub.c superconducting device with weak link between two s

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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257 33, 257 34, 257 35, 257 38, 505702, H01B 1200, H01L 2906, H01L 3922

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052329054

ABSTRACT:
A superconducting device has a structure of superconductor - normal-conductor (semiconductor) - superconductor. The superconductors constituting the superconducting device are made of a super-conducting oxide material of K.sub.2 NiF.sub.4 type crystalline structure or perovskite type crystalline structure which contains at least one element selected from the group consisting of Ba, Sr, Ca, Mg and Ra; at least one element selected from the group consisting of La, Y, Ce, Sc, Sm, Eu, Er, Gd, Ho, Yb, Nd, Pr, Lu and Tb; Cu; and O.

REFERENCES:
patent: 4864237 (1989-09-01), Hoenig
Japanese Journal of Applied Physics 26 (1987) Jul., No. 7, Part II, "Observation of the Josephson Effect in Y-Ba-Cu-O Compound", by Higashino et al, pp. L1211-L1213.
Appl. Phys. Lett. 51(13), Sep. 28, 1987, "Preparation and substrate reactions of superconducting Y-Ba-Cu-O films" by Gurvitch et al., pp. 1027-1029.
Appl. Phys. Lett. 51(15), Oct. 12, 1987, "Growth of hight T.sub.c superconducting thin films using molecular beam epitaxy techniques" by Webb et al. pp. 1191-1193.
Appl. Phys. Lett. 51(25), Dec. 21, 1987, "Effect of noble metal buffer layers on superconducting YBa.sub.2 Cu.sub.3 O.sub.7 thin films" by Chien et al., pp. 2155-2157.
Appl. Phys. Lett. 52(7), Feb. 15, 1988, "Y-Ba-Cu-O superconducting thin films by simultaneous or sequential evaporation" by Mogro-Campero et al., pp. 584-586.
J. Appl. Phys. 63(6), Mar. 15, 1988, "Processing of La.sub.1.8 Sr.sub.0.2 CuO.sub.4 and YBa.sub.2 Cu.sub.3 O.sub.7 superconducting thin films by dual-ion-beam sputtering" by Madakson et al., pp. 2046-2053.
J. Appl. Phys. 51(5), May 1980, "Feasibility of hybrid Josephson field transistors," by Clark et al., pp. 2736-2743.
J. Appl. Phys. 52(12), Dec. 1981, "Superconductor-normal-superconductor microbridges: Fabrication, electrical behavior, and modeling" by van Dover et al, pp. 7327-7343.
IEEE Transaction on Magnetics, vol. MAG-21, No. 2, Mar. 1985, "Study of preparation techniques for a practical microbridge dc-squid structure fabricated from Nb.sub.3 Ge" by Rogalla et al., pp. 536-538.
Z. Phys. B-Condensed Matter 64, 189-193 (1986), "Possible High T.sub.c Superconductivity in the Ba-La-Cu-O System" by Bednorz et al, pp. 189-193.
Physical Review Letters, vol. 58, No. 4, Jan. 26, 1987, "Bulk Superconductivity at 36K in La.sub.1.8 Sr.sub.0.2 CuO.sub.4 " by Cava et al.
Phyical Review Letters, vol. 58, No. 4, Jan. 26, 1987, "Evidence for Superconductivity above 40K in the La-Ba-Cu-O Compound System" by Chu et al.

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