Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-01-22
1992-07-28
James, Andrew J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
357 5, 357 4, 357 6, H01B 1200, H01L 3922, H01L 3912
Patent
active
051341174
ABSTRACT:
A microbridge superconductor device includes a substrate, made of a material such as LaAlO.sub.3, having a lower planar substrate surface, an inclined surface having an overall upward inclination of from about 20 to about 80 degrees from the plane of the lower planar substrate surface, and an upper planar substrate surface parallel to the lower planar substrate surface and separated from the lower planar substrate surface by the inclined surface. A layer of a c-axis oriented superconductor material, made of a material such as YBa.sub.2 Cu.sub.3 O.sub.7-x, is epitaxially deposited on the lower planar substrate surface, and has an exposed a-axis edge adjacent the intersection of the lower planar substrate surface with the inclined surface. The a-axis exposed edge is beveled away from the intersection. A layer of a c-axis oriented superconductor material is epitaxially deposited on the upper planar substrate surface, and has an exposed a-axis edge adjacent the inclined surface. A gap lies between the two a-axis exposed edges. A layer of a non-superconductor material, such as silver, lies in the gap between the two exposed a-axis edges, thereby defining a SNS superconductor microbridge device. The layers of superconductor material are preferably patterned to form a Josephson junction device such as a superconducting quantum interference device.
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DiIorio Mark S.
Yang Kai-Yueh
Yoshizumi Shozo
Biomagnetic Technologies, Inc.
Garmong Gregory
James Andrew J.
Russell Daniel N.
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