High switching speed two mask schottky diode with high field...

Details High switching speed two mask schottky diode with high field... High switching speed two mask schottky diode with high field...

2006-06-16

2009-02-17

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Forming schottky junction

Using refractory group metal

C438S237000, C438S589000, C257S330000

Reexamination Certificate

active

07491633

ABSTRACT:
A power Schottky rectifier device and method of making the same are disclosed. The Schottky rectifier device includes a LOCOS structure grown on the bottom of the trenches by using nitride spacer on the sidewall of the trenches as a thermal oxidation mask. A polycrystalline silicon layer is then filled the first trenches. Under LOCOS structure, a p doped region is optionally formed to minimize the current leakage when the device undergoes a reverse biased. A Schottky barrier silicide layer formed by sputtering and annealing steps is formed on the upper surfaces of the epi-layer and the polycrystalline silicon layer. A top metal layer served as anode is then formed on the Schottky barrier silicide layer and extended to cover a portion of field oxide region of the termination trench. A metal layer served as a cathode electrode is then formed on the backside surface of the substrate opposite to the top metal layer.

REFERENCES:
patent: 7064408 (2006-06-01), Wu
patent: 7078780 (2006-07-01), Wu
patent: 7323402 (2008-01-01), Chiola
patent: 2005/0230744 (2005-10-01), Wu
patent: 2008/0087896 (2008-04-01), Chiola

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