High switching speed two mask Schottky diode with high field...

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S486000

Reexamination Certificate

active

06998694

ABSTRACT:
A power Schottky rectifier device and its fabrication method are disclosed. The method comprises the following steps: First, a semiconductor substrate having a relatively heavily doped n+ doped layer and a lightly doped is provided. A buried p region is then formed in the epi layer by ion implantation. Afterward, a first oxide layer and a nitride layer are then successively formed on the epi layer. The result structure is then patterned to form trenches. Subsequently, a thermal oxidation step is performed to recover etch damage. A wet etch is then performed to remove the thin oxide layer in the trench to expose the silicon in the sidewall. After that, a silicidation process is then performed to form silicide layer on the n-epi-layer in the trenches. After a removal of un-reacted metal layer, a top metal layer is then formed on the silicide layer and on the first oxide layer or nitride layer. The top metal layer on the termination region portion is then patterned to define anode. Finally, after backside layers formed on the rear surface of the substrate are removed, another cathode layer is formed on the rear surface.

REFERENCES:
patent: 3668481 (1972-06-01), Saltich et al.
patent: 3956527 (1976-05-01), Magdo et al.
patent: 4315782 (1982-02-01), Tarng
patent: 4862244 (1989-08-01), Yamagishi
patent: 4982260 (1991-01-01), Chang et al.
patent: 5082795 (1992-01-01), Temple
patent: 5323053 (1994-06-01), Luryi et al.
patent: 5365102 (1994-11-01), Mehrotra et al.
patent: 5418185 (1995-05-01), Todd et al.
patent: 5888891 (1999-03-01), Gould
patent: 5998833 (1999-12-01), Baliga
patent: 6049108 (2000-04-01), Williams et al.
patent: 6096629 (2000-08-01), Tsai et al.
patent: 6252288 (2001-06-01), Chang
patent: 6351018 (2002-02-01), Sapp
patent: 6399996 (2002-06-01), Chang et al.
patent: 6404033 (2002-06-01), Chang et al.
patent: 6426541 (2002-07-01), Chang et al.
patent: 6448160 (2002-09-01), Chang et al.
patent: 6621107 (2003-09-01), Blanchard et al.
patent: 6656843 (2003-12-01), Bol
patent: 6686614 (2004-02-01), Tihanyi
patent: 6740951 (2004-05-01), Tsui et al.
patent: 6855593 (2005-02-01), Andoh et al.
patent: 2003/0057482 (2003-03-01), Harada
patent: 2003/0151086 (2003-08-01), Ueno et al.
Hsu et al., “A Novel Trench Termination Design for 100-V TMBS Diode Application”, Nov. 2001, IEEE Electron Device Letters, vol. 22, No. 11, pp. 551-552.
IBM Technical Disclosure Bulletin, Feb. 1978, pp. 3486-3487.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High switching speed two mask Schottky diode with high field... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High switching speed two mask Schottky diode with high field..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High switching speed two mask Schottky diode with high field... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3701233

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.