High switching speed semiconductor device containing graded kill

Details High switching speed semiconductor device containing graded kill High switching speed semiconductor device containing graded kill

1982-07-30

1985-11-05

Edlow, Martin H.

357 38, 357 90, H01L 29167, H01L 2974

Patent

active

045517444

ABSTRACT:
A semiconductor device for controlling a current comprises a pn junction formed of a high resistivity region and a relatively low resistivity region, a graded distribution of dislocation density is formed in the high resistivity region and decreases with an increase in distance from the pn junction, also graded distribution of lifetime killer concentration is formed in the high resistivity region and decreases with an increase in distance from the pn junction in correspondence with the graded distribution of dislocation density.

REFERENCES:
patent: 3067485 (1962-12-01), Ciccolella
patent: 3440113 (1969-04-01), Wolley
patent: 3485684 (1969-12-01), Mann et al.
patent: 3487276 (1969-12-01), Wolley
patent: 4259683 (1981-03-01), Adler et al.
Switching Phen. in Reverse-Biased Gold-Diffused Si P.sup.+ -i-N.sup.+ Diodes, Supadech et al., Pro. of IEEE vol. 67, No. 4, Apr. 1979, 692-693.

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