High switching speed semiconductor device

Details High switching speed semiconductor device High switching speed semiconductor device

1986-06-18

1988-04-19

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307571, 307200B, 307300, 307549, 307572, 307254, 323278, 323289, 377 89, 377 91, 377 33, H03K 1760, H03K 2100, G05F 1573, G06M 110

Patent

active

047391995

ABSTRACT:
A semiconductor device comprising first and second transistors connected in series with one another to pass a primary current upon receipt of a control signal at the gate of the second transistor. The first transistor is coupled to receive a base current from a secondary power source. A third transistor is coupled to have a primary current path to shunt the base current away from the first transistor upon conduction of the third transistor. A capacitor is connected between the base of the third transistor and the base of the first transistor so that, at the moment the second transistor ceases conduction in response to the control signal, a voltage gradient is generated between the base of the first transistor and the base of the third transistor, causing the current from the secondary power source to charge the capacitor and thus render the third transistor conductive, thereby shunting the base current from the secondary power source away from the base of the first transistor. The action of the capacitor serves to smooth the rise time of the voltage generated by the switching of the second transistor, and thus reduce the magnitude of spike voltages which can damage the first and second transistors and cause heat build-up.

Affiliated with

Also associated with

Rating

High switching speed semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High switching speed semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High switching speed semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2177435