Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1994-07-12
1996-01-16
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257139, 257147, 257155, 257341, H01L 2974, H01L 31111
Patent
active
054850223
ABSTRACT:
An Insulated Gate Bipolar Transistor (IGBT) having a new structure capable of performing a low on-voltage and a high-speed turn-off is provided. A P-type collector region 1 of IGBT is not formed on the entire reverse surface of an N-type base region 2, but formed only on its part, and a metal collector electrode 9 is electrically connected only with the surface to which the P-type collector region 1 exposes. An area of a diffusion window in a collector region is relatively reduced, whereby the impurity concentration of the entire collector region is set at a lower value and hole injection efficiency is decreased. At the same time it is possible to obtain high surface concentration with deep diffusion depth of the collector region required to form a favorable ohmic contact.
REFERENCES:
patent: 4694313 (1987-09-01), Beason
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Patent Abstracts of Japan, vol. 16, No. 166 (E-1193), Apr. 22, 1992, JP 4-014 263, Jan. 20, 1992, Yasukazu.
Patent Abstracts of Japan, vol. 14, No. 244 (E-932) (4187), May 24, 1990, & JP 2-67766, Mar. 7, 1990, Minato.
Patent Abstract of Japan, vol. 13, No. 371 (E-807) (3719), Aug. 17, 1989, JP 1-125 864, May, 18, 1989, Kawamura.
Kabushiki Kaisha Toshiba
Mintel William
Tran Minhloan
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