High surface quality GaN wafer and method of fabricating same

Details High surface quality GaN wafer and method of fabricating same High surface quality GaN wafer and method of fabricating same

2005-10-04

2005-10-04

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S689000, C428S697000, C438S691000, C438S692000, C438S693000, C451S036000, C451S037000, C451S057000

Reexamination Certificate

active

06951695

ABSTRACT:
AlxGayInzN, wherein 0≦x≦1, 0≦y≦1, 0≦z≦1, and x+y+z=1, characterized by a root mean square surface roughness of less than 1 nm in a 10×10 μm2area. The AlxGayInzN may be in the form of a wafer, which is chemically mechanically polished (CMP) using a CMP slurry comprising abrasive particles, such as silica or alumina, and an acid or a base. High quality AlxGayInzN wafers can be fabricated by steps including lapping, mechanical polishing, and reducing internal stress of said wafer by thermal annealing or chemical etching for further enhancement of its surface quality. CMP processing may be usefully employed to highlight crystal defects of an AlxGayInzN wafer.

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