Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2008-01-22
2008-01-22
Tsai, H. Jey (Department: 2812)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C361S509000
Reexamination Certificate
active
10888293
ABSTRACT:
A porous aluminum anode is used in a capacitor. The porous anode is constructed by a solid freeform fabrication (SFF) process and has a plurality of pores. Each of the plurality of pores has a pore size. An electrolyte is infiltrated in the plurality of pores. An oxide layer is formed on the aluminum surface to provide a dielectric for the capacitor.
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Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Tsai H. Jey
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