High storage capacity, wide data input/output channel, static ra

Details High storage capacity, wide data input/output channel, static ra High storage capacity, wide data input/output channel, static ra

1997-09-26

1999-12-07

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

257666, H01L 2348, H01L 2352, H01L 2940, H01L 23495

Patent

active

05998869&

ABSTRACT:
A high storage capacity, wide data channel SRAM having a 64-bit wide data input/output channel, 4 Mbyte or 2 Mbyte of memory, and packaged as a 100-pin QFP or TQFP. The SRAM can be a substitute for a conventional 128 pin QFP or TQFP SRAM because all the functions including pipeline burst transmission are present. Moreover, the SRAM has a comparatively lower package testing and production cost.

REFERENCES:
patent: 5457340 (1995-10-01), Templeton, Jr. et al.
patent: 5543657 (1996-08-01), Diffenderfer et al.

Affiliated with

Also associated with

Rating

High storage capacity, wide data input/output channel, static ra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High storage capacity, wide data input/output channel, static ra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High storage capacity, wide data input/output channel, static ra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-827194