High step coverage silicon oxide thin films

Details High step coverage silicon oxide thin films High step coverage silicon oxide thin films

1991-07-30

1992-03-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437235, 437173, 148DIG118, H01L 2102

Patent

active

050988654

ABSTRACT:
A process for preparing high step coverage silicon dioxide coatings on semiconductor wafers comprising the placing of the wafer to be coated in a process chamber, introducing disilane and nitrous oxide into the process chamber and maintaining the wafer in an atmosphere consisting essentially of a gaseous mixture of disilane and nitrous oxide and initiating and maintaining plasma enhanced chemical vacuum deposition of silicon dioxide from said gaseous mixture by applying radio frequency energy to the wafer to create a plasma adjacent the surface of said wafer is disclosed.

REFERENCES:
patent: 4759993 (1988-07-01), Pai et al.
S. M. Sze, "VLSI Technology"; 1983; pp. 93-129.
Shirafuji et al., "Thin Solid Films"; 1988 V:157:A, 105-15.
Chapple-Sokol et al., "Mater. Res. Soc. Symp. Proc."; 1988 V105, 127-32.
Tanaka et al; "Pro.-Electrochem. Soc."; 1988; V; 88-7, Proc Symp. Dry Process, 1987: 247-54.
Ahmed et al., "Thin Solid Films", 1877, 148, L63-L65.

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