High stability conductive polyacetylene material and process for

Details High stability conductive polyacetylene material and process for High stability conductive polyacetylene material and process for

1982-07-06

1984-11-06

Barr, Josephine L.

Compositions

Electrically conductive or emissive compositions

Metal compound containing

252520, 252521, 524403, 524435, 524406, 524413, 528485, 528490, H01B 106

Patent

active

044811322

ABSTRACT:
The invention relates to a doped polyacetylene film for forming an organic semiconductor or even a conductor of a metallic type. It serves to make the doping more homogeneous and improves the stability over a period of time. The process consists of using as the dopant a salt of an element such as chrome, nickel, iron, titanium, tungsten, or molybdenum belonging to the transition metals, or a salt of an element such as europium or ytterbium belonging to the lanthanides. Doping takes place by immersing the film in a solution having a low dopant concentration, e.g. in toluene, and maintaining the system at low pressure and ordinary temperature for a period of a few days, as a function of the desired doping level and conductivity.

REFERENCES:
patent: 4204216 (1980-05-01), Heeger et al.
patent: 4222903 (1980-09-01), Heeger et al.
patent: 4269738 (1981-05-01), Pez
patent: 4394304 (1983-07-01), Wrek

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