High Speed SRAM with or-gate sense

Details High Speed SRAM with or-gate sense High Speed SRAM with or-gate sense

1995-09-08

1998-03-17

Popek, Joseph A.

Static information storage and retrieval

Addressing

Plural blocks or banks

365203, 365204, G11C 800

Patent

active

057295018

ABSTRACT:
A system and method for replacing sense amplifiers used in conventional RAMS with domino circuits in order to create a domino static random access memory. The domino SRAM of the present invention is created through extensive partitioning of conventional bit lines into local bit lines corresponding to the local cell groups within the SRAM. A ratioed inverter is coupled to each one of the local bit lines in a local cell group to form dynamic nodes and to provide a sense function for the local cell group. A tree-hierarchy of Or-gates is coupled to the ratioed inverters to complete the domino circuit.

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