Coherent light generators – Particular active media – Semiconductor
Patent
1998-02-26
2000-10-03
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
257134, 372 46, H01S 3103
Patent
active
06128324&
ABSTRACT:
A high speed, compact and reliable semiconductor device for spatially switching light in optical switching networks, optical computers and optical interconnection networks is provided. The semiconductor device for spatially switching light comprises stacked P-anode, inner n-base, inner p-base and cathode layers, with an anode cathode on the P-anode layer defining a ridge. A low reverse bias is provided by a biasing means connected to a gate electrode disposed on a ledge of one base layer. A light emission region on the gate electrode side emits light, and a current flow induces a transversely flowing, narrow, light emitting channel that can be spatially shifted by switching the single gate electrode's bias. A high reverse bias also provides a spatially shifted light emission region in another part of the device's face. A cathode electrode is disposed on a portion of the bottom surface of the N-cathode layer, below the gate electrode and most of the cathode region below the ridge is not covered by the cathode electrode. Other embodiments include related variations, a semiconductor device for spatially switching light in a laser and a semiconductor device for spatially switching light in a selective amplifier for optical switching networks, optical computers, optical interconnection systems and related uses. The location of the cathode electrode is important because it induces the horizontal current flow in the cathode region, that is required for the existence of the transversely flowing, narrow, light emitting channel.
REFERENCES:
patent: 5065044 (1991-11-01), Kasahara et al.
patent: 5572540 (1996-11-01), Cheng
patent: 5677552 (1997-10-01), Ogura
R. Pereika et al., "Optoelectronic Switch with Low Holding Power," 26 Eleonic Letters No. 5, pp. 280-282, Mar. 1990.
Paul R. Claisse et al., "Electrical and Optical Swtiching Characteristics of the Single-Quantum-Well DOES Laser", IEEE Transactions On Electron Devices, vol. 39, No. 11, pp. 2523-2527, Nov. 92.
Walter R. Buchwald et al., "A Three Terminal InP/InGaAsP Optoelectronic Thyristor", IEEE Transactions On Electron Devices, vol. 41, No. 4, pp. 620-622, Apr. 1994.
Y. Sun et al., "Beam Steerable semiconductor lasers with large steering range and resolvable spots", Electronics Letters, vol. 30, No. 24, pp. 2034&2035, Nov. 1994.
Y. Sun et al., "Thermally Controlled Lateral Beam Shift and Beam Steering in Semiconductor Lasers",IEEE Photonics Technology Letters, vol. 7, No. 1, pp. 26-28, Jan. 1995.
L. Fan et al., "Dynamic Beam Switching of Vertical-Cavity Surface-Emitting Lasers with Integrated Optical Beam Routers", IEEE Technology Letters, vol. 9, No. 4, pp. 505-507, Apr. 1997.
S.M. Jackson et al., "Optical Beamsteering Using Integrated Optical Modulators", Journal of Lightwave Technology, vol. 15, No. 12, pp. 2259-2262, Dec. 1997.
A.V. Chelnokov et al., "Ultrashort Pulses in Diffraction-Limited Beam From Diode Laser Arrays With External Cavity", Electronics Letters, vol. 29, No. 10, pp. 881&882, May 1993.
Sophie Bouchoule et al., "Highly Attenuating External Cavity for Picosecond-Tunable Pulse Generation from Gain/Q-Switched Laser Diodes",IEEE Journal of Quantum Electronics, vol. 29, No. 6, pp. 1693-1699, Jun. 1993.
W.K. Burns et al., "Active branching waveguide modulators", Applied Physics Letters, vol. 23, No. 12, Dec. pp. 790-792, pp. 1976.
H. Sasaki et al., "Theoretical and Experimental Studies on Active Y-Junctions in Optical Waveguides", IEEE Journal of Quantum Electronics, vol. QE-14, No. 11, pp. 883-892, Nov. 1978.
P. Granestrand et al., "Integrated Optics 4x4 Switch Matrix With Digital Optical Switches", Electronics Letters, vol. 26, No. 1, pp. 4&5, Jan. 1990 .
Buchwald Walter R.
Mitin Vladimir V.
Shah Pankaj B.
Davie James W.
Tereschuk George B.
The United States of America as represented by the Secretary of
Zelenka Michael
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