High speed silicon-on-insulator device and process of fabricatin

Details High speed silicon-on-insulator device and process of fabricatin High speed silicon-on-insulator device and process of fabricatin

1990-02-16

1991-09-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 34, 437 69, 357237, H01L 2186

Patent

active

050473565

ABSTRACT:
High speed silicon-on-insulator radiation hardened semiconductor devices and a method of fabricating same. Starting with a SIMOX wafer (10) having a layer of silicon (12) on a layer of buried oxide (11), P-well and N-well masks are aligned to an oversized polysilicon mask (16). This produces relatively thick source and drain regions (18) and relatively thin gate regions (17). The relatively thick source and drain regions (18) reduce the risk of dry contact etch problems. N-channel and P-channel threshold voltages are adjusted prior to the formation of active areas, thus substantially eliminating edge and back cannel leakage. A sacrificial thin oxide layer (21) is employed in fabricating the N-well and P-well implants so that both front and back channel threshold voltage adjustments are controlled. Good control of doping profiles is obtained, leading to excellent threshold voltage control and low edge and back channel leakages. The speed of devices fabricated using the method of the present invention is high due to reduced capacitances resulting from thinner silicon-on-insulator films. The present invention is fabricated using present equipment and available technology, and provides an easy, straight forward and cost-effective process to fabricate very high speed CMOS devices which are latch-up free and radiation hardened.

REFERENCES:
patent: 4409726 (1983-10-01), Shiota
patent: 4809056 (1989-02-01), Shirato

Affiliated with

Also associated with

Rating

High speed silicon-on-insulator device and process of fabricatin does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High speed silicon-on-insulator device and process of fabricatin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed silicon-on-insulator device and process of fabricatin will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-539679