Optical waveguides – With optical coupler – Particular coupling structure
Reexamination Certificate
2005-01-18
2005-01-18
Kim, Ellen E. (Department: 2874)
Optical waveguides
With optical coupler
Particular coupling structure
C385S014000, C385S039000, C385S040000, C359S245000
Reexamination Certificate
active
06845198
ABSTRACT:
A silicon-based electro-optic modulator is based on forming a gate region of a first conductivity to partially overly a body region of a second conductivity type, with a relatively thin dielectric layer interposed between the contiguous portions of the gate and body regions. The modulator may be formed on an SOI platform, with the body region formed in the relatively thin silicon surface layer of the SOI structure and the gate region formed of a relatively thin silicon layer overlying the SOI structure. The doping in the gate and body regions is controlled to form lightly doped regions above and below the dielectric, thus defining the active region of the device. Advantageously, the optical electric field essentially coincides with the free carrier concentration area in this active device region. The application of a modulation signal thus causes the simultaneous accumulation, depletion or inversion of free carriers on both sides of the dielectric at the same time, resulting in high speed operation.
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Ghiron Margaret
Gothoskar Prakash
Montgomery Robert Keith
Patel Vipulkumar
Pathak Soham
Kim Ellen E.
SiOptical Inc.
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