High speed semiconductor photodetector

Details High speed semiconductor photodetector High speed semiconductor photodetector

2005-02-22

2005-02-22

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S040000, C257S079000, C257S080000, C257S089000

Reexamination Certificate

active

06858463

ABSTRACT:
The invention is a semiconductor avalanche photodetector including an essentially undoped multiplication layer; a thin, undoped light absorbing layer; and a doped waveguide layer which is separate from the light absorbing layer and is capable of coupling incident light into the light absorbing layer.

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Vincent M. Hietala, Allen Vawter, T.M. Brennan, B.E. Hammoius, “Traveling Wave Photodetectors for High-Power, Large Bandwidth Applications” IEEE Transactions on Microwave Theory and Techniques, vol. 43, No. 9, Sep. 1995.

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