High-speed semiconductor memory device and data processing syste

Details High-speed semiconductor memory device and data processing syste High-speed semiconductor memory device and data processing syste

1994-03-16

1997-08-05

Yoo, Do Hyun

Static information storage and retrieval

Addressing

Plural blocks or banks

365191, 36523006, G11C 1300

Patent

active

056549318

ABSTRACT:
A semiconductor integrated circuit device is divided into a plurality of blocks, which are individually equipped with signal generate units such that the signal generate units are distributed in the semiconductor integrated circuit device. The semiconductor integrated circuit device is preferably constructed to generate the pulse signal by the pulse generate units which are provided for the individual blocks, after all initial logic operations on the data and control signals have been taken. Thanks to this construction, an SRAM, for example, can have its write recovery time minimized to 0 so that it can achieve high-speed operations. Moreover, since predecoders are provided for the individual blocks, the wiring line number and area in the chip can be reduced to improve the degree of integration of the semiconductor integrated circuit device. Still moreover, signal delay and skew can be reduced in the chip so that high-speed can be achieved. Another feature is that either the input/output pads of the data into or out of the semiconductor integrated circuit device or their accompanying circuit units are distributed in the semiconductor integrated circuit device. The individual features described above can be used solely or in combination, if necessary, to achieve the above-specified objects.

REFERENCES:
patent: 5222047 (1993-06-01), Matsuda et al.
patent: 5280448 (1994-01-01), Watanabe

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