High-speed semiconductor device

Details High-speed semiconductor device High-speed semiconductor device

1992-07-28

1993-05-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Having graded composition

257197, H01L 2972, H01L 2712, H01L 29161

Patent

active

052142973

ABSTRACT:
A high-speed semiconductor device comprising emitter potential barrier layer disposed between an emitter layer and a base layer, a collector layer, and a collector potential barrier layer disposed between the base layer and the collector layer. The collector potential barrier layer has a structure having a barrier height changing from a high level to a low level along the direction from the base layer to the collector layer, whereby, even when no bias voltage is applied between the collector layer and the emitter layer, a collector current can flow through the device.

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patent: 4518979 (1985-05-01), Dumke et al.
patent: 4712121 (1987-12-01), Yokoyama
I.B.M. Tech. Discl. Bull. vol. 27 No. 12, May 1985 "Semiconductor Hot Electron Transistor with Resonant Tunneling Emitter", p. 7175.
Muller & Kamins "Device Electronics for Integrated Circuits" .COPYRGT.1986 p. 309.
"Resonant Tunneling Through Quantum Wells at Frequencies up to 2.5 THz" Applied Physics Letters, vol. 43, No. 6, Sep. 15, 1983, pp. 588-590.
"Resonant Tunneling in Semiconductor Double Barriers" Applied Physics Letters vol. 24, No. 12, Jun. 15, 1984, pp. 593-595.
"Graded Collector Heterojunction Bipolar Transistor" Applied Physics Letters, vol. 44, No. 1, Jan. 1, 1984, pp. 105-106.

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