High-speed semiconductor device

Details High-speed semiconductor device High-speed semiconductor device

1985-07-12

1987-12-08

Edlow, Martin H.

357 16, 357 34, H01L 2712, H01L 29161, H01L 2972

Patent

active

047121211

ABSTRACT:
A high-speed semiconductor device including an emitter layer a base layer a collector layer, a potential-barrier layer disposed between the base layer and the collector layer, and a superlattice disposed between the emitter layer and the base layer. The superlattice has at least one quantum well therein and has a low impedance state for tunneling carriers therethrough. Preferably, the high-speed semiconductor device may further include a graded layer disposed between the emitter layer and the superlattice. The graded layer has a conduction-energy level which is approximately equal to that of the emitter layer at the interface of the graded layer and the emitter layer and approximately equal to a predetermined conduction-energy level of the superlattice at the interface of the graded layer and the superlattice. In addition, the high-speed semiconductor device may act as a frequency multiplier, providing an output signal having 2.sup.n times a many frequencies as an input signal when n is the number of quantum wells in said superlattice.

REFERENCES:
patent: 4616241 (1986-10-01), Biefeld

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