High speed referenceless bipolar logic gate with minimum input c

Details High speed referenceless bipolar logic gate with minimum input c High speed referenceless bipolar logic gate with minimum input c

1983-09-07

1985-08-27

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307443, 307455, 307561, 307264, H03K 1704, H03K 19086

Patent

active

045380759

ABSTRACT:
In a logic gate which is provided having input transistors each with a collector electrode at a first node (which serves as a signal output node), an emitter electrode at a second node to which all emitters are coupled and a base electrode for receiving binary logic signal input, and further having a load resistor between the first node and a supply voltage coupling, the improvement in that means are provided for controlling the emitter current at the second node in response to voltage on the first node in order to inhibit saturation of the input transistors and to enhance switching speed of the logic gate. The emitter current controlling means may include a current regulating transistor coupled between the second node and a ground reference wherein the base electrode thereof is coupled through a third node to a biasing means coupled to the first node. The current regulating transistor may be a Schottky transistor, that is, a transistor with a Schottky diode coupled between the base electrode and the collector electrode. The biasing means may be a feedback resistor coupled between the first node and the third node. Voltage across the feedback resistor may be clamped to limit voltage range.

REFERENCES:
patent: 3753005 (1973-08-01), Bertram et al.
patent: 3778646 (1973-12-01), Masaki
patent: 4165470 (1979-08-01), Fulkerson
patent: 4394588 (1983-07-01), Gaudenzi

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