Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1995-06-07
1997-11-11
Harvey, Jack B.
Static information storage and retrieval
Magnetic bubbles
Guide structure
365227, 364707, G06F 132, G11C 1140
Patent
active
056873824
ABSTRACT:
A memory system including a first memory area (MEM-A) implemented using memory units including low threshold voltage transistors powered by a low supply voltage source, and a second memory area (MEM-B) implemented using memory units including higher threshold voltage cells powered by a higher supply voltage source. The first memory area, MEM-A, is designated to contain frequently accessed variables, with less frequently accessed variables designated for storage in the second memory area, MEM-B. The most frequently accessed variables stored in MEM-A provide for fast access at a low power per access power dissipation level due to the lower supply voltage and lower threshold voltage design. Alternatively, the less frequently accessed variables stored in MEM-B require a high power per access, but negligible leakage current during static steady state conditions.
REFERENCES:
patent: 4096584 (1978-06-01), Owen, III et al.
patent: 4665507 (1987-05-01), Gondon et al.
patent: 4820974 (1989-04-01), Katsura et al.
patent: 5222231 (1993-06-01), Gunji
patent: 5367687 (1994-11-01), Yoshida
patent: 5457790 (1995-10-01), Iwamura et al.
Kojima Hirotsugu
Sasaki Katsuro
Harvey Jack B.
Hitachi America Ltd.
Lefkowitz Sumati
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