High speed, radiation hard complementary MOS capacitive voltage

Details High speed, radiation hard complementary MOS capacitive voltage High speed, radiation hard complementary MOS capacitive voltage

1977-03-11

1978-08-22

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307215, 307264, 307270, 307DIG1, 365230, H03K 502, H03K 1908, G11C 800, H03K 1934

Patent

active

041091639

ABSTRACT:
A complementary MOS voltage level shift circuit which can be used as a memory buffer circuit, for example, is disclosed. The circuit utilizes both N-channel depletion mode devices and P-channel enhancement mode MOS devices preferably fabricated on silicon-on-sapphire. Both types of devices are operated with only negative or zero gate-source voltage in order to minimize threshold voltage shifts in radiation environments. A capacitive voltage level shifting technique is used to obtain push-pull operation with driver type devices in order to reduce power consumption and increase switching speed while feeding into a capacitive load. Load type devices are used to prevent discharge of a capacitive load.

REFERENCES:
patent: 3675144 (1972-07-01), Zuk
patent: 3716724 (1973-02-01), Parrish et al.
patent: 3823330 (1974-07-01), Rapp
patent: 3925689 (1975-12-01), Rubenstein
patent: 3976984 (1976-08-01), Hirasawa
patent: 4011471 (1977-03-01), Rocket, Jr.
patent: 4016476 (1977-04-01), Morokawa et al.
patent: 4045691 (1977-08-01), Asano
Krick, "Complementary MNOS Electronically Alterable Read-Only Memory," IBM Tech. Discl. Bull.; vol. 13, No. 1, pp. 263-264, 6/1970.
Chin, "Push-Pull Driver Using Bipolar and CMOS Devices," IBM Tech. Discl. Bull.; vol. 16, No. 11, pp. 3570-3571; 4/1974.

Affiliated with

Also associated with

Rating

High speed, radiation hard complementary MOS capacitive voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High speed, radiation hard complementary MOS capacitive voltage , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed, radiation hard complementary MOS capacitive voltage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1560763