High speed PROM device

Static information storage and retrieval – Read only systems – Fusible

Patent

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Details

365189, G11C 700, G11C 1700

Patent

active

044320701

ABSTRACT:
A semiconductor memory device (100) utilizing a programming transistor (54) capable of switching high programming currents, and a read transistor (53) capable of sensing the state of the cell (i.e. programmed or unprogrammed). The programming transistor, utilized only when programming the cell, being rather large, is rather slow. The read transistor, utilized only when reading the cell, is constructed to be as small as possible, thereby achieving a substantially increased reading speed over prior art PROM devices which utilize a single transistor per memory cell for both programming and reading.

REFERENCES:
patent: 3611319 (1971-10-01), Hyatt
patent: 4101974 (1978-07-01), Immer et al.
patent: 4125880 (1978-11-01), Taylor

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