High speed point defect diffusion simulating method

Details High speed point defect diffusion simulating method High speed point defect diffusion simulating method

1996-03-12

1998-07-21

Teska, Kevin J.

Boots, shoes, and leggings

364488, 364489, G06F 9455, H01L 2170, H01L 2174

Patent

active

057843023

ABSTRACT:
In an interstitial concentration simulating method, a mesh is set in a simulation region of a semiconductor device. Under a condition that an area outside of the simulation region is infinite, a provisional interstitial concentration and a provisional interstitial diffusion flux at the boundary of the simulation region are calculated. Then, an interstitial diffusion rate at the boundary of the simulation region is calculated by a ratio of the provisional interstitial diffusion flux to the provisional interstitial concentration. Finally, an interstitial diffusion equation is solved for each element of the mesh using the interstitial diffusion rate at the boundary.

REFERENCES:
D. Collard et al., "IMPACT-A Point-Defect-Based Two-Dimensional Process Simulation:Modeling the Lateral Oxidation-Enhanced Diffusion of Dopants in Silicon", IEEE Trans, on Electron Devices, vol. ED-33, No. 10. pp. 1454-1462, Oct. 1986.
M. Hane et al., "A Model for Boron Short Annealing After Ion Implantation", IEEE Trans. on Electron Devices, vol 40, No. 7, pp. 1215-1222, Jul. 1993.
Michael R. Kump et al., "The Efficient Simulation of Coupled Point Defect and Impurity Diffusion", IEEE Transactions on CAD, vol. 7, No. 2, Feb. 1988, pp. 191-204.
Kenji Taniguchi et. al., "Process Modeling and Simulation: Boundary Conditions for Point Defect-Based Impurity Diffusion Model", IEEE Transactions on CAD, vol. 9, No. 11, Nov. 1990, pp. 1177-1183.
Clifford D. Maldonado et al., "A Transient Analytical Model for Predicting the Redistribution of Injected Intershtials", IEEE Transactions on CAD, vol. 9, No. 8, Aug. 1990, pp. 846-855.
Kenji Taniguichi et al., "Theoretical Model for Self-Intershtials Generation at the Si/SiO.sub.2 Interface During Thermal Oxidation of Silicon," J. Appl. Phys. Apr. 1989, pp. 2723-2727.

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