High speed plasma etching system

Details High speed plasma etching system High speed plasma etching system

1981-05-06

1983-01-04

Massie, Jerome W.

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 204192E, 204298, 239145, 219121PD, 219121PG, C23C 1500

Patent

active

043671144

ABSTRACT:
This invention relates to a plasma etching system, which includes a lower flange and a spaced upper flange; a chamber wall mounted between the flanges to form a closed etching chamber; a grounded wafer support plate disposed in said chamber for receiving thereon a wafer to be processed; an electrical insulating element interposed between the chamber wall and the support plate; a sintered or sintered-like porous electrode plate mounted in the chamber in spaced relationship with respect to the wafer; said plate having a gas inlet for receiving a supply of etching gas; circuitry for applying an excitation voltage to this plate, and said chamber having a gas outlet leading to a vacuum source.

REFERENCES:
patent: 3503557 (1970-03-01), Hutton
patent: 4209357 (1980-06-01), Gorin et al.
patent: 4253907 (1981-03-01), Parry et al.
patent: 4270999 (1981-06-01), Hassan et al.
patent: 4307283 (1981-12-01), Zajac
`Plasma Etching Aluminum` Circuits Manufacturing, vol. 18 No. 4 (Apr. 78) pp. 39-42.
Crabtree et al, "Plasma . . . A Review" Scanning Electron Microscopy, vol. I, 1978, pp. 543-554.

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