High speed photodiode with a barrier layer for blocking or...

Details High speed photodiode with a barrier layer for blocking or... High speed photodiode with a barrier layer for blocking or...

2006-04-04

2006-04-04

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S031000, C257S431000

Reexamination Certificate

active

07022544

ABSTRACT:
A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for blocking or eliminating the slow photon-generated carriers in the region where the drift field is low.

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