High speed photodetector

Details High speed photodetector High speed photodetector

1979-12-28

1982-04-20

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

H01J 4014

Patent

active

043261264

ABSTRACT:
A high speed photodetector using an amorphous semiconductor, such as silicon, and having a localized state density of at least 10.sup.18 /cm.sup.3 is described. The amorphous silicon may be prepared by evaporation or chemical vapor deposition or sputtering.

REFERENCES:
patent: 3917943 (1975-11-01), Auston
patent: 4142195 (1979-02-01), Carlson et al.
patent: 4163677 (1979-08-01), Carlson et al.
patent: 4217148 (1980-08-01), Carlson
"Amorphous Semiconductors", by Tauc Physics Today, Oct. 1976, pp. 23-31.

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