Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-11-30
1997-03-25
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257220, H01L 27148, H01L 29768
Patent
active
056147406
ABSTRACT:
An improved CCD imaging array is disclosed which is capable of operating at 10,000 frames-per-second. The imager consists of an array of 512.times.512 pixels having 16 serial output channels which provides a composite output data rate up to 250 Megasamples/second. The serial output registers are constructed from peristaltic CCDs, each having a GaAs FET output circuit bump-mounted to the silicon substrate. A four-layer pinned photodiode is utilized as the photodetector, and each photodiode has its own antiblooming drain. The antiblooming gates double as an optical shuttering device. Sample-and-hold output circuitry is also provided.
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Gaalema Stephen D.
Gardner David W.
Linnenbrink Thomas E.
Meier Stephen
Q-Dot Inc.
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