High speed optoelectronic switch

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357 4, 357 15, 357 16, 357 30, 357 61, H01L 2712, H01L 2748, H01L 29161, H01L 2714

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043762859

ABSTRACT:
An optoelectronic switch has been formed from a semi-insulating substrate of indium phosphide doped with a deep level impurity and disposed intermediate a microstrip transmission line. One conductor of the transmission line has a small gap in its metallization. Upon illumination of the gap by laser pulses which are absorbed near the semiconductor surface, a photogenerated electron-hole plasma forms thereby providing a conducting path across the gap turning the switch "on."
A process of fabricating the switch is described, an important feature of which is a heat-treatment process which improves the response time of the switch to .about.50 picoseconds. Another important part of the invention is the formation of an optically semi-transparent metallic film at the gap surface. This provides greater efficiency in the coupling of light into the device at the gap while at the same time maintaining a short electronically non-conductive gap and thus a relatively low ON-state impedance for the switch.

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D. H. Auston, "Picosecond Optoelectronic Switching and Gating", Applied Physics Letters, vol. 26, No. 3, pp. 101-103 (1975). _
C. H. Lee, "Picosecond Optoelectronic Switching in GaAs", Applied Physics Letters, vol. 30, No. 2, pp. 84-86, (1977).
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H. C. Casey, Jr. and E. Buehler, "Evidence for Low Surface Recombination Velocity on N-Type InP", Applied Physics Letters, vol. 30, No. 5 (1977) pp. 247-249.
C. W. Iseler, "Properties of InP Doped with Fe, Cr, or Co" in: Gallium Arsenide and Related Compounds 1978, Institute of Physics Conference Serial Number 45, Chapter 2, pp. 144-153.
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