1980-06-23
1983-03-08
Edlow, Martin H.
357 4, 357 15, 357 16, 357 30, 357 61, H01L 2712, H01L 2748, H01L 29161, H01L 2714
Patent
active
043762859
ABSTRACT:
An optoelectronic switch has been formed from a semi-insulating substrate of indium phosphide doped with a deep level impurity and disposed intermediate a microstrip transmission line. One conductor of the transmission line has a small gap in its metallization. Upon illumination of the gap by laser pulses which are absorbed near the semiconductor surface, a photogenerated electron-hole plasma forms thereby providing a conducting path across the gap turning the switch "on."
A process of fabricating the switch is described, an important feature of which is a heat-treatment process which improves the response time of the switch to .about.50 picoseconds. Another important part of the invention is the formation of an optically semi-transparent metallic film at the gap surface. This provides greater efficiency in the coupling of light into the device at the gap while at the same time maintaining a short electronically non-conductive gap and thus a relatively low ON-state impedance for the switch.
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Leonberger Frederick J.
O'Donnell Frederick J.
Carroll J.
Edlow Martin H.
Massachusetts Institute of Technology
Reynolds Leo R.
Smith, Jr. Arthur A.
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