High-speed, non-volatile electrically programmable and erasable

Details High-speed, non-volatile electrically programmable and erasable High-speed, non-volatile electrically programmable and erasable

1996-06-28

1997-10-21

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular connection

365 51, 365 63, 36518514, 36518533, 36518901, G11C 700

Patent

active

056803460

ABSTRACT:
A non-volatile programmable circuit having programming and read bitlines, a non-volatile memory cell, and a read select transistor, and a method for its operation. The non-volatile memory cell is programmable through the programming bitline. The read select transistor is connected between the non-volatile memory cell and the read bitline. During read operation, the programming bitline is grounded and programmed information is readable onto the read bitline. During programming operation, the read bitline is grounded, and programmed information is programmable into the non-volatile memory cell for storage and retention.

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