High speed NAND-type content addressable memory (CAM)

Details High speed NAND-type content addressable memory (CAM) High speed NAND-type content addressable memory (CAM)

2006-09-19

2006-09-19

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S063000, C365S168000

Reexamination Certificate

active

07110275

ABSTRACT:
A CAM block includes a CAM array having a plurality of rows and columns of 4-bit NAND-type CAM cells therein. Each of a plurality of the NAND-type cells includes a respective ladder-type compare circuit having four two-transistor rungs. At least one of the plurality of rows includes a first 4-bit NAND-type CAM cell having a first ladder-type compare circuit with four two-transistor rungs and a second 4-bit NAND-type CAM cell having a second ladder-type compare circuit with four two-transistor rungs. A match line segment is also provided, which is connected to four source terminals of transistors in the first ladder-type compare circuit and four drain terminals of transistors in the second ladder-type compare circuit.

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