Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1989-03-20
1991-02-12
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307451, 307452, 307449, 307542, 307552, 365208, 36518906, 36523006, H03K 1716, H03K 19003, H03K 19094, G11C 1134
Patent
active
049926772
ABSTRACT:
A semiconductor integrated circuit includes: a data output terminal; a first semiconductor element connected between a first operating potential point and the data output terminal; a second semiconductor element connected between the data output terminal and a second operating potential point; first control means connected to a control input terminal of the first semiconductor element; second control means connected to a control input terminal of the second semiconductor element; first generating means for generating a first predetermined voltage; and second generating means for generating a second predetermined voltage higher than the first predetermined voltage. When voltage at the data output terminal is higher than the second predetermined voltage, the first control means controls the first semiconductor element to be in the OFF-state, and the second control means controls the second semiconductor element to be in the ON-state to lower the voltage of the data output terminal to the second predetermined voltage. On the other hand, in the case where the voltage of the data output terminal is lower than that of the first predetermined voltage, the output of the first control means controls the first semiconductor element so that it is in the ON-state and the output of the second control means controls the second semiconductor element so that it is in the OFF-state so as to raise the voltage of the data output terminal to the first predetermined voltage.
REFERENCES:
patent: 3885093 (1975-05-01), Mooney
patent: 4739198 (1988-04-01), Marayama
patent: 4785203 (1988-11-01), Nakamura
patent: 4794564 (1988-12-01), Watanabe
patent: 4864164 (1989-09-01), Ohshima et al.
patent: 4873673 (1989-10-01), Hori et al.
National Convention Record, The Institute of Electronics; Information and Communication; part 2, pp. 2-218, 1987.
Ishibashi Koichiro
Minato Osamu
Shimohigashi Katsuhiro
Bertelson David R.
Hitachi , Ltd.
Miller Stanley D.
LandOfFree
High speed MOSFET output buffer with low noise does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High speed MOSFET output buffer with low noise, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High speed MOSFET output buffer with low noise will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-22214