Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1981-10-26
1984-09-04
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307443, 307446, 307453, 307572, 307582, 377 79, 377117, H03K 19096, H03K 1920, H03K 17687, G11C 1928
Patent
active
044699620
ABSTRACT:
The present invention provides a circuit comprising (1) a logic element responsive to data of first and second negative voltage potentials, the logic element having a depletion mode MESFET data input gate, and (2) a depletion mode MESFET transmission gate operatively associated with the data input gate for enabling the selective serial transmission of data therethrough to the logic element in response to clock signals of third and fourth negative voltage potentials, the pinch-off threshold voltage of the data input gate being between approximately the first and second negative voltage potentials, the pinch-off threshold voltage of the transmission gate being between approximately the third and fourth negative voltage potentials, said third negative voltage potential being approximately equal to or more negative than said second negative voltage potential, said first negative voltage potential being more positive than said second negative voltage potential, and said fourth negative voltage potential being more negative than said third negative voltage potential.
REFERENCES:
patent: 4028556 (1977-06-01), Cachier et al.
patent: 4034301 (1977-07-01), Kashio
patent: 4177390 (1979-12-01), Cappon
"Optimization of GaAs MESFET Logic Gates with Subnanosecond Propagation Delays", published in Aug. 1979, IEEE Journal of Solid State Circuits, vol. SC-14, No. 4, pp. 708-715.
Landers, "MOS Shift Registers"; The Electronic Engineer; pp. 59-61; 3/70.
Hargrave, "Commutating and Interfacing with Junction and MOSFETs"; Electronic Engineering; pp. 56-59; 12/69.
Eden et al., "The Prospects for Ultrahigh-Speed VLSI GaAs Digital Logic"; IEEE-JSSC; vol. SC-14, No. 2, pp. 221-239; 4/79.
Rocchi et al., "GaAs Binary Frequency Dividers for High Speed Applications up to 10 GHz"; Electron Letters, vol. 17, No. 4, pp. 168-169; 2/10/81.
Anagnos Larry N.
Collins D. W.
Hughes Aircraft Company
Karambelas A. W.
Rosenberg G. B.
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