High speed memory cell

Details High speed memory cell High speed memory cell

1975-10-02

1976-11-02

Fears, Terrell W.

Communications: electrical

Digital comparator systems

307288, 307290, 340173FF, G11C 1140

Patent

active

039900568

ABSTRACT:
An improved very high speed, static random access memory cell disclosed which is comprised of complementary metal oxide semiconductor field effect transistors which may be formed by silicon on sapphire techniques. To maximize the speed of the read operation while, at the same time, decreasing the overall cell area and consequently the cost, the cell is made highly non-symmetrical in design. As an example, selected ones of the semiconductor transistors may have reduced channel widths with respect to one another.

REFERENCES:
patent: 3493786 (1970-02-01), Ahrons
patent: 3521242 (1970-07-01), Katz
patent: 3798621 (1974-03-01), Batinger
patent: 3820086 (1974-06-01), Ho
patent: 3868656 (1975-02-01), Stein

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