High speed, low temperature diazo processor

Details High speed, low temperature diazo processor High speed, low temperature diazo processor

1979-04-19

1981-01-06

Hix, L. T.

Radiation imagery chemistry: process, composition, or product th

Post imaging processing

Physical developing

354300, 430150, 34 37, 34234, G03D 700

Patent

active

042433100

ABSTRACT:
A processor for developing diazo film has flat platens disposed within a housing and spaced apart a distance to accommodate the thickness of the film. The housing includes an inlet and an outlet aligned with the space between the platens and means for advancing a film from the inlet and through the space between the platens in a preheat chamber and in a developing chamber and for discharging the developed film. The platen facing the emulsion side of the film is heated in the preheat chamber so that the film is heated to a desired temperature prior to developing. A metered amount of aqueous ammonia is supplied through a lower chamber at the inlet end of the developing chamber wherein the ammonia is separated from the water by reason of the differential temperature and ammonia vapor rises to contact the emulsion side of the film for rapidly developing thereof and the water is drained from the lower chamber.

REFERENCES:
patent: 2009962 (1935-07-01), Kurten
patent: 2761364 (1956-09-01), Cross
patent: 3147687 (1964-09-01), Halden
patent: 3364833 (1968-01-01), Mulvany
patent: 3411906 (1968-11-01), Boone et al.
patent: 3435751 (1969-04-01), Goodman et al.
patent: 4056824 (1977-11-01), Iiyama et al.
patent: 4099868 (1978-07-01), Schroter et al.
patent: 4122473 (1978-10-01), Ernohazy et al.
patent: 4135814 (1979-01-01), Schroter et al.
patent: 4150992 (1979-04-01), Meadows et al.

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