High speed-low power gallium arsenide basic logic circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307304, 307450, 307457, H03K 19094, H03K 19017, H03K 1920

Patent

active

044044801

ABSTRACT:
The present invention provides a high-speed low-power gallium arsenide basic logic circuit which is capable of being driven by either emitter coupled logic or gallium arsenide logic level signals to provide combinational logic gating such as OR-AND, OR-NAND, OR-AND-OR and OR-AND-NOR capable of driving directly either emitter coupled logic or gallium arsenide logic circuits. The combinational logic gating is basically accomplished by diode logic which performs other functions and which requires less area on an integrated circuit chip than active switching transistors.

REFERENCES:
patent: 3299363 (1967-01-01), Slattery et al.
patent: 4300064 (1981-11-01), Eden
Van Tuyl and Liechti, "High-Speed GaAs MSI", IEEE Int'l Solid-State Circuits Conf., Session 1, Feb. 18, 1976.
Zuleeg et al., "Femtojoule High-Speed Planar GaAs E-JFET Logic", IEEE Transactions on Electron Devices, vol. ED-25, No. 6, Jun. 1978, pp. 628-639.
Van Tuyl and Liechti, "GaAs MESFET Logic with 4-GHz Clock Rate", IEEE Journal of Solid-State Circuits, vol. SC-12, No. 5, Oct. 1977, pp. 485-496.

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