High speed low-power consumption semiconductor non-volatile memo

Details High speed low-power consumption semiconductor non-volatile memo High speed low-power consumption semiconductor non-volatile memo

1997-07-28

1998-09-01

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

36518521, 365203, 365207, G11C 700

Patent

active

058019928

ABSTRACT:
A current source of a semiconductor read only memory device supplies current through a digit line to a memory cell so as to seen be whether the memory cell is implemented by an enhancement type transistor or a depletion type transistor, and a potential transferring circuit either discharges a precharge level from an input line connected to a sense amplifier or maintains the precharge level depending upon the potential level at the drain node of the memory cell so that a small amount of parasitic capacitance of the input line allows the sense amplifier to rapidly determine the operation mode of the memory cell.

REFERENCES:
patent: 5625586 (1997-04-01), Yamasaki et al.
patent: 5703820 (1997-12-01), Kohno

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