High speed-low power consuming IGFET integrated circuit

Details High speed-low power consuming IGFET integrated circuit High speed-low power consuming IGFET integrated circuit

1984-10-17

1987-01-06

Carroll, J.

357 2314, 357 46, 357 65, 357 68, H01L 2978, H01L 2702, H01L 2348

Patent

active

046350888

ABSTRACT:
An improved semiconductor device operable at a high-speed and with a low power consumption is disclosed. The device comprises a common impurity-doped region, a first insulated gate field effect transistor utilizing the common impurity-doped region as a drain thereof, a second insulated gate field effect transistor utilizing the common impurity-doped region as a drain thereof, control means for controlling switching operations of the first and second transistor at the same time and means for deriving an output signal from the common impurity-doped region.

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patent: 4384218 (1983-05-01), Shimotori et al.
patent: 4389582 (1983-06-01), Suzuki et al.
patent: 4412237 (1983-10-01), Matsumura et al.

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