High-speed, low consumption integrated logic circuit

Details High-speed, low consumption integrated logic circuit High-speed, low consumption integrated logic circuit

1975-03-12

1977-06-07

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307214, 307215, 307304, H03K 1908, H03K 1934, H03K 1936

Patent

active

040285561

ABSTRACT:
A NOR or a NAND gate of integrated circuit type, having a fan-out of at least three and with a propagation time in the order of 1 nanosecond for a power consumption of a fraction of a milliwatt, is provided. The gate comprises an inverter stage supplied by a saturable load, and an amplifier stage injecting into a diode and into a saturable load connected in such a fashion as to effect a voltage shift. At the input, there are field-effect transistors of low threshold voltage (-0.2 volts), drawing two microamps at zero gate voltage. For the remainder of the circuit, field-effect transistors having a higher absolute threshold voltage (-0.6 volts) are used, these being designed to draw a very low current at a supply voltage of 1.5 volt.

REFERENCES:
patent: 3250917 (1966-05-01), Hofstein
patent: 3299291 (1967-01-01), Warner, Jr. et al.
patent: 3619670 (1971-11-01), Heimbigner
patent: 3700981 (1972-09-01), Masuhara et al.
patent: 3832574 (1974-08-01), Leehan

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