High-speed logic gate with two complementary transistors and sat

Details High-speed logic gate with two complementary transistors and sat High-speed logic gate with two complementary transistors and sat

1975-10-15

1977-03-22

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307215, 307288, 307213, 307205, H03K 1908, H03K 1940, H03K 1934

Patent

active

040138968

ABSTRACT:
A novel high-speed logic gate of compact design, having low energy consumption comprises a plurality of components each constituted by two complementary transistors and saturable resistors integrated upon one in the same substrate. The base of the first transistor has for its base a portion of the collector of a second transistor, and for its collector the base of the second transistor. The second transistor has its base diffused into its emitter into its base.

REFERENCES:
patent: 3302041 (1967-01-01), Poston
patent: 3376431 (1968-04-01), Merrell
patent: 3456131 (1969-07-01), Adem
patent: 3508081 (1970-04-01), Matsuda
patent: 3660687 (1972-05-01), Sahm et al.
patent: 3891866 (1975-06-01), Okuhara et al.

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